GOLD WIRE FOR BONDING OF SEMICONDUCTOR ELEMENT

GOLD WIRE FOR BONDING OF SEMICONDUCTOR ELEMENT

PURPOSE:To improve tensile strength of a ball neck section, to increase a loop height, and to reduce wire bending by containing La of 30 to 100wt.ppm, Be of 2 to 10wt.ppm, Ca of 1 to 20wt.ppm, and Mg of 1 to 10wt.ppm, and making the remains of high purity Au. CONSTITUTION:La is contained in 30 to 10...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YAMAMOTO TAIYO, KUJIRAOKA TAKESHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To improve tensile strength of a ball neck section, to increase a loop height, and to reduce wire bending by containing La of 30 to 100wt.ppm, Be of 2 to 10wt.ppm, Ca of 1 to 20wt.ppm, and Mg of 1 to 10wt.ppm, and making the remains of high purity Au. CONSTITUTION:La is contained in 30 to 100wt.ppm, Be is in 2 to 10wt.ppm, Ca is in 1 to 20wt.ppm, and Mg is in 1 to 10wt.ppm; and the remains consist of high purity Au. Au of at least 99.99% including inevitable impurity is used as a raw material. Accordingly, crystal grain at a ball neck section during bonding is micronized, thereby improving neck strength and mechanical strength of a gold wire. As a result, loop configuration of a long loop and a high loop can be stabilized.