VAPOR GROWTH DEVICE

PURPOSE:To improve the uniformity of the distributions of the film thickness and specific resistance of the film formed on a wafer mounted on a susceptor by providing a temp. measuring plate having the same shape as the shape of the susceptor in proximity to the susceptor and controlling the temp. of the susceptor in accordance with the measured value thereof. CONSTITUTION:Gaseous raw materials are caused to flow horizontally with the susceptor 5 disposed in a device body 2. The gaseous raw materials are thermally cracked on the abovementioned susceptor 5 and the epitaxial film is formed on the surface of the wafer 3 mounted thereon. The temp. measuring plate 9 having the same shape as the shape of the susceptor 5 is disposed in proximity to the susceptor 5 of the abovementioned vapor growth device. Since plural pieces of temp.-measuring elements (thermocouple) 20 are built in this temp.-measuring plate 9, the temps. in the respective parts of the susceptor 5 are exactly measured. The temp. of the susceptor 5 is controlled in accordance therewith, by which the temp. distribution is made uniform. the distributions of the film thickness and specific resistance of the film formed on the wafer 3 are thus made uniform.