MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To make it possible to form a wiring into such a form as a crack is not generated in a covering film, which ts formed on the wiring, by a method wherein a chamfered pattern data is used for a pattern data. CONSTITUTION:A metal film 3 consisting of Al or the like is formed on an insulating film 2, such as a thermal oxide film, a PSG film or the like, formed on a semiconductor substrate 1, a resist film is formed thereon, a chamfered pattern data is inputted to draw directly a pattern on the resist film using an electron beam aligner and the pattern is developed to form a resist film a having a form to correspond to the pattern data. The film 4 having a pattern, whose angles are chamfered, is formed by using the chamfered pattern data.