MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To easily manufacture a multi-layer wiring having copper by forming copper which is hard to etch selectively in a specified region of a silicon oxide film and an alloy of aluminum and silicone and by removing the alloy through etching using the copper as a mask. CONSTITUTION:A silicon dioxide film 102 and an aluminum-silicon alloy 103 are provided to a semiconductor substrate 101, and a photoresist 104 is formed in a region excepting a wiring region thereon. A copper 105 is formed in a region excepting the resist 104, the resist 104 is removed, and the aluminum- silicon alloy 103 is removed through dryetching using the copper 105 as a mask. A multilayer wiring having copper can be manufactured readily by selectively forming an aluminum-silicon alloy which can be easily etched and copper which is hard to etch in this way.