INTEGRATED TYPE SEMICONDUCTOR LASER

PURPOSE:To increase an output, and to obtain low-noise characteristics by forming the active layers of all semiconductor lasers in structure composed of a plurality of quantum well layers, thickness of which is the de Brogie wavelength or less of electron waves. CONSTITUTION:An N-type GaAs buffer layer 102, an N-type AlxGa1-xAs clad layer 103 and an active layer 104 having multiple quantum structure consisting of AlyGa1-yAs and GaAs are shaped onto an N-type GaAs single crystal substrate 101. A P-type AlxGa1-xAs clad layer 105 formed in two inverted mesa- shaped ridge stripes and a P-type GaAs contact laver 106 are shaped, and both ends of both ridge stripes are fill with a II-VI compound semiconductor such as a ZnSxSe1-x layer 107. The active layer 104 has structure made up of a plurality of quantum well layers, thickness of which is brought to the de Brogie wavelength or less of electron waves. Accordingly, an output can be increased, and low-noise characteristics are acquired.