THIN FILM TYPE NONLINEAR ELEMENT
PURPOSE:To prevent the deterioration of the characteristics of an element with the lapse of time, to improve the nonlinearity and to reduce the capacity by using a metal nitride-contg. metal oxide film as an insulating material and forming a metal nitride-contg. metal oxide film as an underlayer. CO...
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creator | ONO NAGAMASA |
description | PURPOSE:To prevent the deterioration of the characteristics of an element with the lapse of time, to improve the nonlinearity and to reduce the capacity by using a metal nitride-contg. metal oxide film as an insulating material and forming a metal nitride-contg. metal oxide film as an underlayer. CONSTITUTION:A metal 1 such as Al, Ti, Nb or Ta or an alloy contg. such metals 1 is sputtered on a substrate 6 in an nitrogen-contg. atmosphere and a metal film formed on the substrate 6 is thermally oxidized to form a metal nitride-contg. metal oxide film 5 as an underlayer. A metal 3 such as Al, Ti, Nb or Ta or an alloy contg. such metals 3 is then sputtered on the underlayer 5 in a nitrogen-contg. atmosphere and a metal film formed on the underlayer 5 is thermally or anodically oxidized to form an insulating film 2. An MIM thin film type nonlinear element obtd. by forming the underlayer 5 and the insulating film 2 has satisfactory nonlinearity, small capacity and extremely stabilized characteristics. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH02257123A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH02257123A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH02257123A3</originalsourceid><addsrcrecordid>eNrjZFAI8fD0U3Dz9PFVCIkMcFXw8_fz8fRzdQxScPVx9XX1C-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GRkam5oZGxo7GxKgBAPNgIgI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>THIN FILM TYPE NONLINEAR ELEMENT</title><source>esp@cenet</source><creator>ONO NAGAMASA</creator><creatorcontrib>ONO NAGAMASA</creatorcontrib><description>PURPOSE:To prevent the deterioration of the characteristics of an element with the lapse of time, to improve the nonlinearity and to reduce the capacity by using a metal nitride-contg. metal oxide film as an insulating material and forming a metal nitride-contg. metal oxide film as an underlayer. CONSTITUTION:A metal 1 such as Al, Ti, Nb or Ta or an alloy contg. such metals 1 is sputtered on a substrate 6 in an nitrogen-contg. atmosphere and a metal film formed on the substrate 6 is thermally oxidized to form a metal nitride-contg. metal oxide film 5 as an underlayer. A metal 3 such as Al, Ti, Nb or Ta or an alloy contg. such metals 3 is then sputtered on the underlayer 5 in a nitrogen-contg. atmosphere and a metal film formed on the underlayer 5 is thermally or anodically oxidized to form an insulating film 2. An MIM thin film type nonlinear element obtd. by forming the underlayer 5 and the insulating film 2 has satisfactory nonlinearity, small capacity and extremely stabilized characteristics.</description><language>eng</language><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>1990</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19901017&DB=EPODOC&CC=JP&NR=H02257123A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19901017&DB=EPODOC&CC=JP&NR=H02257123A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ONO NAGAMASA</creatorcontrib><title>THIN FILM TYPE NONLINEAR ELEMENT</title><description>PURPOSE:To prevent the deterioration of the characteristics of an element with the lapse of time, to improve the nonlinearity and to reduce the capacity by using a metal nitride-contg. metal oxide film as an insulating material and forming a metal nitride-contg. metal oxide film as an underlayer. CONSTITUTION:A metal 1 such as Al, Ti, Nb or Ta or an alloy contg. such metals 1 is sputtered on a substrate 6 in an nitrogen-contg. atmosphere and a metal film formed on the substrate 6 is thermally oxidized to form a metal nitride-contg. metal oxide film 5 as an underlayer. A metal 3 such as Al, Ti, Nb or Ta or an alloy contg. such metals 3 is then sputtered on the underlayer 5 in a nitrogen-contg. atmosphere and a metal film formed on the underlayer 5 is thermally or anodically oxidized to form an insulating film 2. An MIM thin film type nonlinear element obtd. by forming the underlayer 5 and the insulating film 2 has satisfactory nonlinearity, small capacity and extremely stabilized characteristics.</description><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1990</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAI8fD0U3Dz9PFVCIkMcFXw8_fz8fRzdQxScPVx9XX1C-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GRkam5oZGxo7GxKgBAPNgIgI</recordid><startdate>19901017</startdate><enddate>19901017</enddate><creator>ONO NAGAMASA</creator><scope>EVB</scope></search><sort><creationdate>19901017</creationdate><title>THIN FILM TYPE NONLINEAR ELEMENT</title><author>ONO NAGAMASA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH02257123A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1990</creationdate><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>ONO NAGAMASA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ONO NAGAMASA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM TYPE NONLINEAR ELEMENT</title><date>1990-10-17</date><risdate>1990</risdate><abstract>PURPOSE:To prevent the deterioration of the characteristics of an element with the lapse of time, to improve the nonlinearity and to reduce the capacity by using a metal nitride-contg. metal oxide film as an insulating material and forming a metal nitride-contg. metal oxide film as an underlayer. CONSTITUTION:A metal 1 such as Al, Ti, Nb or Ta or an alloy contg. such metals 1 is sputtered on a substrate 6 in an nitrogen-contg. atmosphere and a metal film formed on the substrate 6 is thermally oxidized to form a metal nitride-contg. metal oxide film 5 as an underlayer. A metal 3 such as Al, Ti, Nb or Ta or an alloy contg. such metals 3 is then sputtered on the underlayer 5 in a nitrogen-contg. atmosphere and a metal film formed on the underlayer 5 is thermally or anodically oxidized to form an insulating film 2. An MIM thin film type nonlinear element obtd. by forming the underlayer 5 and the insulating film 2 has satisfactory nonlinearity, small capacity and extremely stabilized characteristics.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
title | THIN FILM TYPE NONLINEAR ELEMENT |
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