THIN FILM TYPE NONLINEAR ELEMENT

PURPOSE:To prevent the deterioration of the characteristics of an element with the lapse of time, to improve the nonlinearity and to reduce the capacity by using a metal nitride-contg. metal oxide film as an insulating material and forming a metal nitride-contg. metal oxide film as an underlayer. CO...

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1. Verfasser: ONO NAGAMASA
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To prevent the deterioration of the characteristics of an element with the lapse of time, to improve the nonlinearity and to reduce the capacity by using a metal nitride-contg. metal oxide film as an insulating material and forming a metal nitride-contg. metal oxide film as an underlayer. CONSTITUTION:A metal 1 such as Al, Ti, Nb or Ta or an alloy contg. such metals 1 is sputtered on a substrate 6 in an nitrogen-contg. atmosphere and a metal film formed on the substrate 6 is thermally oxidized to form a metal nitride-contg. metal oxide film 5 as an underlayer. A metal 3 such as Al, Ti, Nb or Ta or an alloy contg. such metals 3 is then sputtered on the underlayer 5 in a nitrogen-contg. atmosphere and a metal film formed on the underlayer 5 is thermally or anodically oxidized to form an insulating film 2. An MIM thin film type nonlinear element obtd. by forming the underlayer 5 and the insulating film 2 has satisfactory nonlinearity, small capacity and extremely stabilized characteristics.