INTEGRATED SEMICONDUCTOR LASER

PURPOSE:To provide the title integrated semiconductor laser with independently controllable low noise part and a high output part by a method wherein III-V compound semiconductors are laminated to be etched away down to specified parts; II-VI compound is buried in both ends; and then photoconductive elements are laminated on one part of a substrate. CONSTITUTION:A III-V group compound semiconductor clad layer 103, an active layer 104 are formed on an n-type GaAs single crystal substrate 101 and a buffer layer 102. Furthermore, another layer 105 and a contact layer 106 formed into two inverse mesa type are provided on the active layer 104 and then II-VI compound semiconductor 107 is buried in both ends of ridge strips. Next, p-type ohmic electrodes 108, 109 are formed on respective ridges while an n-type ohmic electrode 110 is formed on the opposite surface of the substrate 101. Finally, p-type electrodes 111, 112 are formed on the rear part as photodiodes to detect the laser beam output. Through these procedures, a high-power semiconductor laser whose output is independently controllable and has low noise can be manufactured.