THIN FILM FORMATION

PURPOSE:To utilize the characteristics of a thin film in a vertical direction and to form an integrated device series by forming a thin film by allowing vapor deposition grains to adhere to a base material while moving a mask provided to the vicinity of the surface of the base material in a directio...

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Bibliographische Detailangaben
1. Verfasser:	HYONO TADASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To utilize the characteristics of a thin film in a vertical direction and to form an integrated device series by forming a thin film by allowing vapor deposition grains to adhere to a base material while moving a mask provided to the vicinity of the surface of the base material in a direction parallel to the base material surface. CONSTITUTION:In an evacuated vacuum tank 4, vapor deposition grains from a sputtering cathode 3 are allowed to adhere to a base material 1, by which a thin film is formed. In the above thin film forming method, a mask 2 for restricting the adhesion of the vapor deposition grains to the base material 1 is provided to the vicinity of the surface of the base material 1. In the course of the above film formation, this mask 2 is moved in a direction parallel to the base material surface. By this method, the position of the lamination of the thin film is shifted in succession in a direction parallel to the base material 1 and a slender pattern can be formed, and further, the direction of the lamination of the thin film can have a pseudo-slope with respect to the base material surface and, as a result, wiring devices can be formed.