METHOD AND DEVICE FOR FORMING THIN FILM BY COUNTER TARGET-TYPE SPUTTERING

PURPOSE:To uniformize the thickness distribution of a thin film to be formed on a substrate by partially covering a sputtering surface with a shield cover to form an exposed sputtering region and exchanging or displacing the shield covers. CONSTITUTION:The freely attachable and detachable shield cov...

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Bibliographische Detailangaben
Hauptverfasser:	HIRATA TOYOAKI, MUROI HIRONOBU, NAOE MASAHIKO, FUJIMOTO HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To uniformize the thickness distribution of a thin film to be formed on a substrate by partially covering a sputtering surface with a shield cover to form an exposed sputtering region and exchanging or displacing the shield covers. CONSTITUTION:The freely attachable and detachable shield covers 4 and 4 for partially covering the sputtering surfaces 6 and 6 are provided in front of a couple of targets 1 and 1 opposed to each other. One or plural notched openings are provided to the shield covers 4 and 4 to form the exposed sputtering regions 6A and 6A opposed to each other at a part of the sputtering surfaces 6 and 6. The shield covers 4 and 4 are exchanged or displaced to newly expose the sputtering regions 6B and 6B which have been covered. By this method, the whole surfaces of the targets 1 and 1 are effectively utilized for sputtering.