DRY ETCHING APPARATUS

PURPOSE:To enhance anisotropy, Si selection ratio and mass productivity by heating an anode plate out of a vacuum tank. CONSTITUTION:An etching chamber is evacuated, and etching gas 8 is simultaneously introduced into the etching chamber trough a diffusing plate 5, an O-ring 9 and an anode 1 to be h...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KAKEHI YUTAKA, UEYAMA KEIJI, OMOTO YUTAKA
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To enhance anisotropy, Si selection ratio and mass productivity by heating an anode plate out of a vacuum tank. CONSTITUTION:An etching chamber is evacuated, and etching gas 8 is simultaneously introduced into the etching chamber trough a diffusing plate 5, an O-ring 9 and an anode 1 to be held under a predetermined pressure. A magnetic field generated by a magnet 11 and an electric field generated from a high frequency power source connected to a cathode 2 are formed in the etching chamber, and a discharge is generated. The anode 1 is heated by a ring heater 10. The anode 1 is made of a material having satisfactory thermal conductivity. Since a quartz ring 6 and the anode 1, an upper plate 7 are isolated via a vacuum layer therebetween, the part of the anode 1 in the etching chamber is maintained at a uniform temperature. If the material of the anode 1 is made of a material having low thermal conductivity, a heat medium passage is provided in the anode 1, and silicone oil is fed as the medium.