METAL WIRING METHOD FOR SEMICONDUCTOR ELEMENT

PURPOSE: To eliminate the increase of the wiring resistance of a metallic wiring film connecting each element, etc., and to improve the performance characteristic of a semiconductor element, and then, to simplify a process by forming an ohm contact containing the same type of impurity at the contacting sections with adjacent impurity areas containing different kinds of impurities of the metallic wiring film connecting each element, etc. CONSTITUTION: After an N-type well 2 is formed on a P-type semiconductor substrate 1, a heavily P doped area 4 is formed to a prescribed depth and an N -doped area 3 is formed at another location by ion implantation. Then, after an insulating layer 5 having a prescribed thickness is vapor-deposited, contact holes 6 are formed by etching the contacting sections with a wiring film by using a contact mask and a first wiring film 70 which is simultaneously connected to the areas 3 and 4, etc., is formed on the entire surface of the sample having the formed holes 6 by vapor deposition. The wiring film 70 is formed by using undoped crystalline silicon. Then a silicide film 12 is formed on the wiring film 70 through heat treatment and, finally, a second wiring film 80 is formed.