SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To prevent a bonding strength from being lowered by a diffusion when this device is left at a high temperature and to completely eliminate an open defect of a bonded part by a method wherein a wiring pattern and a finger part are formed of an Al metal and an aluminum pad and a protruding part of the finger are pressure-bonded by using ultrasonic waves or are bonded by using both the ultrasonic waves and heat CONSTITUTION:A semiconductor device is manufactured as follows: a semiconductor element 8 is arranged and installed at a cutout part 2 of an insulating resin film 1; and the semiconductor element 8 is connected to fingers where patterns 3 on the insulating resin film 1 are overhung on the cutout part 2. During this process, the wiring patterns 3 formed on said insulating resin film 1 and the finger parts are formed of an aluminum metal; and a protruding part 5 is formed in a part corresponding to a position of an aluminum pad, of the semiconductor element 8, of the fingers by a halt-etching operation 4. The semiconductor element 8 is aligned with the cutout part 2 in such a way that the aluminum pad coincides with the protruding part 5 of the fingers; and it is pressurebonded by using ultrasonic waves or is bonded by using both the ultrasonic waves and heat.