PLASMA ASHING METHOD

PURPOSE:To prevent explosion of a resist film and enable the resist film due to ashing to be eliminated by setting the temperature of a substrate to be at low temperature until the surface layer of the resist film is eliminated and then to a high temperature after the elimination. CONSTITUTION:When...

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Bibliographische Detailangaben
Hauptverfasser:	TAKADA TOSHINARI, KIKUCHI MASASHI, WATABE TOKUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To prevent explosion of a resist film and enable the resist film due to ashing to be eliminated by setting the temperature of a substrate to be at low temperature until the surface layer of the resist film is eliminated and then to a high temperature after the elimination. CONSTITUTION:When a substrate 1 has a resist film 11 that is a cured and modified surface layer 11a, a reaction gas excited by oxygen plasma, etc., introduced from a introduction port 2 is operated on the resist film 11 without lighting an infrared lamp 5 initially. Then, after the surface layer 11a is decomposed/ vaporized and is eliminated due to chemical reaction with oxygen radical and reaction gas, the lamp 5 is lit, the substrate 1 is heated, chemical reaction with oxygen radical or radical of reaction gas is promoted, and then the resist film 11 is eliminated readily. Thus, the resist film 11 with stress internally can be eliminated without explosion due to heat stress.