DOWNSTREAM TYPE ASHING DEVICE

PURPOSE:To enable a resist film adhered to the rear surface of a substrate due to intrusion of a radical within plasma of a reaction gas between this gas to be ashing-eliminated by providing a plurality of pins for forming a gap in reference to a heating means by supporting the rear surface of a sub...

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Bibliographische Detailangaben
Hauptverfasser:	TAKADA TOSHINARI, KIKUCHI MASASHI, WATABE TOKUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To enable a resist film adhered to the rear surface of a substrate due to intrusion of a radical within plasma of a reaction gas between this gas to be ashing-eliminated by providing a plurality of pins for forming a gap in reference to a heating means by supporting the rear surface of a substrate within a vacuum treating room. CONSTITUTION:A heating means 5 is constituted by a plurality of infrared lamps and a plurality of pins 12 protruding toward the upper part through the heating means 5 is provided within a vacuum treating room 4. The rear surface of a substrate 1 is supported by the tip of the pin 12 so that a gap between the substrate 1 and the heating means 15 can be formed. Thus, a reaction gas radical enters the gap, thus ashing the resist film on the rear surface.