MULTIPOLAR BIDIRECTIONAL SEMICONDUCTOR CONTROL DEVICE

PURPOSE:To reduce the number of elements for constructing a protector, etc., and simplify the process for assembling into a box by unifying a plurality of pnpn-type two-terminal thyristors into one semiconductor chip. CONSTITUTION:A p-type is used as a first conduction type and an n-type as a second conduction type. This device is formed of five layer regions, i.e., a first semiconductor layer P6, and a fourth semiconductor layer P7a, P7b, consisting of n-type semiconductors, and a second semiconductor layer N8ab, a third semiconductor layer N9a, N9b, and a fifth semiconductor layer N10a, N10b, consisting of n-type semiconductors. The semiconductor layer P6 and the semiconductor layer N8ab are shorted by an electrode 26a, the semiconductor layer P7a and the semiconductor layer N10a are shorted by an electrode 27a, and the semiconductor layer P7b and the semiconductor layer N10b are shorted by an electrode 27b. When used as a protector for a communication apparatus, a terminal 28 is connected to the earth 30, a terminal 29a is connected to core line 31a of a communication line, and a terminal 29b is connected to a core line 31b of the communication line. The core lines 31a, 31b are connected to a communication apparatus 32.