SEMICONDUCTOR INTEGRATED DEVICE

PURPOSE:To improve breakdown strength toward destruction against overvoltage by connecting one terminal to a positive side wiring, connecting the other terminal to a negative side wiring, and providing a protecting circuit whose breakdown strength is lower than that of function circuits in a chip. CONSTITUTION:In addition to a first power source protecting circuit 6a in the vicinity of a Vcc pad 1, a second power source protecting circuit 6b whose breakdown strength is lower than that of functional circuits in a chip is arranged in the vicinity of a Vss pad 2. In this way, current paths for absorbing overvoltage are increased into two paths, and the current capacity of wirings is increased. Therefore, the resistance between a power source and the Vss can be decreased, and the electric charge supplied with the overvoltage is made to flow as a short-circuit current in an early period. Thus the overvoltage can be absorbed. The breakdown strength toward destruction against the overvoltage that is applied to the terminals of the power source can be enhanced.