MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To make a contact forming part come into excellent ohmic contact by a method wherein multiple wirings are laminated with one another holding interlayer insulating films while a silicide film selectively doped with an impurity is used on the part wherein a silicide wiring in the lower layer wiring is formed into a contact. CONSTITUTION:A field oxide film 102, a silicon film 103 are formed on a substrate 101 while these films 102, 103 are patterned to form e.g. a platinum film 104 on the whole surface and then the film 104 is heat-treated to form a platinum silicide wiring 105. Next, an insulating film 106 is formed to be selectively patterned so that the film 106 may be left at least on a prospective wiring cross formation part 108 but not to be left on a prospective contact formation part 107 and then the whole surface, after being doped with an impurity using the insulating film 106 as a mask, is heat-treated. Next, an interlayer insulating film 109 as the first layer, a wiring 110 crossed with the platinum silicide wiring 105 as the second layer and another interlayer insulating film 111 as the other second layer are successively formed. Finally, a through hole 112 is formed in the said part 107 while a leading-out wiring 113 for the platinum silicide wiring 105 comprising Al, ITO film is formed.