PLASMA PROCESSOR

PURPOSE:To reduce damage of a substrate and to process the substrate at a low temperature by providing a substrate processing chamber for processing the substrate with reactive seed gas to be introduced into the outer cylinder of an inner electrode through a gas inlet communicating with a plasma generating chamber. CONSTITUTION:Inner electrodes 3 are concentrically disposed at a predetermined interval in a chamber 1, the electrodes 3 and the chamber 1 are hermetically held and secured by upper and lower flanges 4, 5 and O-rings 6 to form a cylindrical plasma generating chamber 7 between the chamber 1 and the electrodes 3. Many reaction seed gas inlets 11 opened in a substrate processing chamber 24 are provided under the electrodes 3, predetermined amount of processing gas is introduced from a gas inlet 8 and high frequency power is applied from a high frequency power source 12 to the inner and outer electrodes 3, 2. Then, a plasma is generated in the chamber 7, thereby introducing generated active seed gas into the chamber 24 through the many inlets 11.