CHEMICAL VAPOR GROWTH DEVICE

PURPOSE:To supply the surface of a wafer uniformly with a raw material gas, and to form a film in equal film thickness by ejecting the raw material gas in the direction vertical to a pipe axis into a reaction pipe from the gas exhaust nozzle of a gas introducing pipe affixed onto the external wall of the reaction pipe. CONSTITUTION:In a chemical vapor growth device, a wafer holder 5 holding wafers 6 is inserted into a reaction pipe 10 mounted to a furnace body 1, both ends of the reaction pipe 10 are sealed by an exhaust end cap 3 and an introducing end cap 11, and a vacuum pump is operated and air in the reaction pipe 10 is exhausted from an exhaust port 3a while the inside of the reaction pipe 10 is heated at a fixed temperature by a heater 1a. A raw material gas forwarded from a gas introducing pipe 12 to a gas exhaust nozzle 10a is ejected to the reaction pipe 10 and made to flow in parallel with the wafers 6, thus forming films having uniform film thickness onto the surfaces of the wafers 6.