JPH0213822B

PURPOSE:To obtain the short channel CMOS transistor of high speed which enables enhancement of integration by surrounding both of source and drain of each of N-channel and P-channel transistors with the regions of opposited conductive type to that of the source and drain which comprise higher impuri...

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Hauptverfasser:	SAKAI YOSHIO, MASUHARA TOSHIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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