CHEMICAL VAPOR DEPOSITION METHOD ONTO SEMICONDUCTOR SUBSTRATE

PURPOSE: To generate a plasma more by irradiating the gas in a reaction chamber with a low-frequency, low-voltage RF wave and then irradiating it with a lower-voltage, higher RF wave. CONSTITUTION: A substrate is placed on the surface 1 in the reaction chamber 2, reaction gas is admitted through a p...

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Bibliographische Detailangaben
Hauptverfasser:	REOPORUDO DEI YAU, GAREN EICHI KAWAMOTO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE: To generate a plasma more by irradiating the gas in a reaction chamber with a low-frequency, low-voltage RF wave and then irradiating it with a lower-voltage, higher RF wave. CONSTITUTION: A substrate is placed on the surface 1 in the reaction chamber 2, reaction gas is admitted through a pipe 4, and an RF wave is admitted to an electrode 3 from an RF generating device 5 through a feeder 19 to produce an RF electromagnetic field in the chamber 2. The timing of a high-frequency signal and a low-frequency signal applied to the feeder 19 is obtained by placing radio frequency generators 10 and 11 in operation through a control interface 12. Consequently, pulses of about 55kHz in frequency and 1000W in electric power are applied to the electrode 3 for about 6ms to ionize the gas in the chamber 2, thereby generating a plasma. When the gas begins to be ionized, pulses of about 13MHz are generated with about 250W and applied to the electrode 3 for about 55mn to further carry out ionization more than that.