MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To facilitate formation of a satisfactory and stable surface by a method wherein an insulating film made of compound composed of indium, phosphorus and nitrogen is formed on a semiconductor surface and an electrode layer is formed on it. CONSTITUTION:An InP system compound semiconductor 5 surface is subjected to vapor phase etching under the pressure of simple substance or compound of indium or phosphorus immediately before an insulating film 11 is formed on the semiconductor surface. Then a film made of compound composed of indium, phosphorus and nitrogen is built up by a chemical vapor deposition(CVD) method and electrode layers 12 and 13 are formed on the surfaces. As the substrate surface is subjected to vapor phase etching under the pressure of indium or phosphorus before the deposition of the insulating film, a natural oxide film can be removed while the evaporation of phosphorus from the substrate surface is suppressed. Moreover, as the InPxNy film is formed by a CVD method as the insulating film 11, the hole defects of the InP system compound semiconductor surface and the discrepancy of stoichiometry near the surface can be reduced. With this constitution, the satisfactory and stable surface can be formed.