FORMING METHOD OF ELECTRODE ON MICROWAVE DIELECTRIC CERAMIC

PURPOSE:To improve reliability by changing a copper film formed through electroless plating into an electrode through specific treatment. CONSTITUTION:A copper film shaped through electroless plating is thermally treated at 500-700 deg.C in an inert gas atmosphere having oxygen partial pressure of 1...

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Bibliographische Detailangaben
Hauptverfasser:	YAHAGI MASAHIRO, KIKUCHI TATSUYA, SHIKAUCHI SHINICHI, TANIGUCHI MASAAKI, MORI KANEO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE WAVEGUIDES
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Beschreibung
Zusammenfassung:	PURPOSE:To improve reliability by changing a copper film formed through electroless plating into an electrode through specific treatment. CONSTITUTION:A copper film shaped through electroless plating is thermally treated at 500-700 deg.C in an inert gas atmosphere having oxygen partial pressure of 10ppm or 10ppm and turned into an electrode. A baking device 6 controls conditions by an inert gas bomb (hereinafter called a bomb) 7 supplying a baking furnace 9 with an inert gas, the baking furnace 9 baking the electrode on ceramics, a silicone tube 8 connecting the bomb 7 and the baking furnace 9 and feeding the inert gas, and an oxygen partial pressure gage 10 measuring oxygen partial pressure in the baking furnace. Accordingly, the copper film is baked positively, thus elevating Q, then improving reliability.