SEMICONDUCTOR MEMORY DEVICE

PURPOSE:To hold an output state immediately before a transition in a decoder circuit, to eliminate an unnecessary internal operation, and to decrease a malfunction caused by a noise such as an alpha-ray by taking in address information through a through latch circuit to be controlled by a macro selecting signal. CONSTITUTION:X address decoder circuits 2a and 2b are composed of through latch circuits 1a and 1b for taking in address signals A0-A4 and decoders 3a and 3b to decode the outputs of the circuits 1a and 1b. A selector/writing circuit 8 outputs information obtained from any one out of data signal lines 9a and 9b of memory cell groups 5a and 5b selected by the macro selecting signal in writing and outputs either of the signal lines 9a and 9b in reading out. The through latch circuits 1a and 1b output address information to the word decoders 3a and 3b as it is when a micro selecting signal is under a selected state. Consequently, the outputs of word drivers 4a and 4b become unnecessary, and the frequency of the malfunction can be minimized.