MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent any Al spike from occurring without augmenting the contact resistance between an Si substrate and an Al wiring by a method wherein, during the formation process of Al films, an Ag film containing Si is higher concentration than the Si slid solubility at heat treatment temperature is formed in the first phase while another Al film containing Si in lower concentration than the Si concentration in the first phase is formed in the second phase. CONSTITUTION:The first layer insulating film 1 is deposited on an Si substrate 2. First, the photographic etching process is used together with the dry-etching process to remove oxide film 1 on the contact region for making a contact hole 3. Secondly, the Si substrate 2 is held on an anode of a sputtering device while the contact hole 3 is coated with the first phase Al film 4 as a wiring film on a cathode comprising Al-Si alloy (1wt.% of Si). Thirdly, the Al film 4 is coated with the second phase A film 5. In case of forming the second phase Al film 5, Al-Si alloy containing 0.4wt.% of Si is used for the cathode of the sputtering device while the second Al film 5 becomes another Al layer containing 0.4wt.% of Si.