METHOD FOR FORMING AN INORGANIC THIN FILM ON A SUBSTRATE WITH USE OF A TARGET

An inorganic thin film is deposited on a substrate by sputtering a sputter target by cathode sputtering in the vicinity of the substrate. To produce the target, at least two pulverulent starting components are mixed. The mixture is tempered if a uniform reaction product can be obtained in this proce...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MARUTSUERUSU POIKERUTO, OIGEN MORATSUHA, HANSUUPEETAA SHIERUHI, GIYUNTERU SHIYUMITSUTO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS METALLURGY SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	An inorganic thin film is deposited on a substrate by sputtering a sputter target by cathode sputtering in the vicinity of the substrate. To produce the target, at least two pulverulent starting components are mixed. The mixture is tempered if a uniform reaction product can be obtained in this process. It is powdered and the powder is deposited on a metallic base by plasma-jet spraying. This produces the target. Preferably, an oxide mixture is tempered which is a starting product for a superconducting ceramic material. In order to convert the thin film deposited to a superconducting state, it is treated for a prolonged time at temperatures of 300 DEG -800 DEG C. in an oxygen-containing atmosphere. The reaction product obtained on tempering may have, for example, the overall composition ZBamCunOx, where 1.5