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PURPOSE:To quicken response speed while reducing cost by providing a diode array in the shape of photoevoltaic force and a silicon transistor array corresponding to each diode of the photodiode array formed on a common substrate and a multilayer wiring board. CONSTITUTION:Schottky photodiode 2 const...

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Bibliographische Detailangaben
Hauptverfasser:	SHIYOUJI NORINOBU, ARAI MICHIO, SHIRAISHI KAZUMASA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To quicken response speed while reducing cost by providing a diode array in the shape of photoevoltaic force and a silicon transistor array corresponding to each diode of the photodiode array formed on a common substrate and a multilayer wiring board. CONSTITUTION:Schottky photodiode 2 constituting a photoelectric transducer is formed on a glass substrate 1 while forming a MOS transistor IC 3 having a built-in single crystal silicon MOS transistor array constituting a driving circuit and a multilayer wiring board 4 given a multilayer wiring. An Al film 10 constituting a contact pad is formed on a Cr metal film 5 of the Schottky photodiode 2, and a bonding wire 10 connects this Al film to the MOS transistor IC 3, while a bonding wire 11 connects the IC to the multilayer wiring board 4. Since a photovoltaic type substance is used as the photoelectric transducer, readout speed is quickened while cost can be lowered.