MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To reduce generation of dust from a wafer within a process by performing cladding formation of a layer to be a constituting member of a semiconductor on a semiconductor substrate and then etching the periphery part of the substrate where the layer is formed so that the ground semiconductor substrate may be exposed to the edge face. CONSTITUTION:An element isolation region, a gate electrode structure, a source, a source and a drain region, and a PSG film as an interlayer insulating film are formed on a silicon substrate 1 in sequence. At this stage, a multilayer film 2 consisting of silicon dioxide is formed at the wafer edge part. Then, after performing cladding formation of a protection layer consisting of photo resist, etc., each film is etched in sequency by using a hydrofluoric acid etching liquid and a hydrofluoric/nitric acid etching liquid until the ground silicon substrate 1 is exposed. In this case, when a protection layer is cladding-formed only on a surface where the semiconductor device is formed, unneeded film adhered to the rear surface of the wafer due to vapor growth can be eliminated simultaneously. Thus, generation of dust can be controlled even if the wafer edge part is brought into contact with tools, etc.