JPH0131704B

PURPOSE:To provide a high resistance element of very small size and stable high resistance in a semiconductor device by forming the element of a polycrystalline silicon layer which has impurities of different electric conductivities. CONSTITUTION:After an active region 12 is formed in a semiconductor substrate 11, a polycrystalline silicon film 14 is formed through an insulating film 13 on the overall surface. Then, phosphorus ions are implanted to provide an electric conductivity in the film 14, thereby providing approx. 20kOMEGA/square of layer resistance value. Subsequently, the polycrystalline silicon layer is formed in the prescribed pattern, a mask nitrided film is formed in a thickness of 3,000Angstrom for the implantation of boron ions of the second impurity, and a hole 16 of approx. 4mum is opened at the part to be formed with a high resistance of the polycrystalline silicon layer. Thereafter, boron ions are implanted in the entire surface. Then, an insulating film 17 is formed, a contacting hole 18 is opened, and aluminum wiring electrodes 19 are formed, and a semiconductor resistance element is then completed.