FORMATION OF RESIST PATTERN FOR PLATING BUMP

PURPOSE:To prevent generation of resist residual and to prevent reduction in pattern adhesion strength by coating a positive type photoresist to a lower layer resist and then performing exposure, by coating a negative type dry film photoresist on the upper layer and then performing exposure, and then performing development continuously. CONSTITUTION:A positive type photoresist 2 is coated over an IC wafer 1 and then a photo mask 3 for positive type is used for exposure. After laminate- coating a negative type dry film photoresist 4, exposure is performed by using a photomask 5 for negative type. Development is performed by a negative type dry film photo resist development liquid, development is performed by a positive type photoresist development liquid, and a resist pattern for plating bump is formed. It prevents generation of resist residual and reduction in pattern adhesion strength.