JPH0129058B

PURPOSE:To obtain a preferable nitrided silicon film which has high bonding strength without exfoliation or crack by proviing a preliminary sputtering step of mixing oxygen in silicon target in nitrogen gas atmosphere mixed with a large quantity of oxygen. CONSTITUTION:A preliminary sputtering is perfomred in nitrogen gas atmosphere which contains a large quantity of oxygen more than 10% in the state that a shutter for shielding between a target and a substrate is closed, the oxygen gas mixture amount in the atmospheric gas is then switched to 1% or less, the shutter is opened, this sputtering is performed, thereby forming a nitrided silicon film on the substrate. Thus, a large quantity of oxygen gas is mixed in the nitrogen gas atmosphere, the preliminary sputtering is achieved, thereby oxidizing the surface of the silicon target 1 to some degree. Subsequently, this target is used to perform this sputtering in the nitrogen gas atmosphere which contains fine amount of nitrogen or oxygen, thereby containing a large amount of oxygen near the boundary to the substrate in the formed nitrided silicon film. As a result, strong bonding strength is obtained by the chemical bonding strength of oxygen atmos.