SEMICONDUCTOR MEMORY DEVICE

PURPOSE: To improve the cost effectiveness of mass production and design by forming a memory of another type operating in a different form, such as CCD, by using the same basic design of a memory of a certain type like that of a MOS dynamic RAM. CONSTITUTION: This semiconductor memory device has an array 10 consisting of rows and columns of memory cells, serial registers 20a, 20b of which one stage has plural stages cooperating with the respective columns and transfer devices 21a, 21b which add data from the columns to the register stages in response with the transfer signals from outside. An address is received from an external address device and the array 10 is addressed by the device 12 so as to select one among the rows to be operated. The data is continuously loaded from the registers to the external device to be used, by which the data over the entire part of the rows is accessed by one address. As a result, the cost effectiveness of the mass production and the design are improved.