FORMATION OF THIN FILM

PURPOSE:To easily form a patterned thin film on a substrate by providing a patterned beam passing hole in a target at the time of forming the thin film of the target material on the substrate by ion-beam sputtering. CONSTITUTION:In the ion-beam sputtering device, an inert gas such as Ar, N2 is intro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YASUJIMA HIROYUKI, NISHITANI MIKA
Format: Patent
Sprache:eng
Schlagworte:
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