FORMATION OF THIN FILM

PURPOSE:To easily form a patterned thin film on a substrate by providing a patterned beam passing hole in a target at the time of forming the thin film of the target material on the substrate by ion-beam sputtering. CONSTITUTION:In the ion-beam sputtering device, an inert gas such as Ar, N2 is introduced into an ion source 2 from a cylinder 1 to generate an ion beam 3. The ion beam 3 is accelerated by an electric field 10, and the target 4 having a patterned beam passing hole 7 is irradiated by the ion beam 3. The ion beam 3 collides with the target 4 to generate sputtered particles 5, a part of the particles pass through the hole 7 to form a good straightforward beam of the film forming particles 6 and reach the surface of the substrate 8, and a patterned thin film 9 is formed. When plural targets are used, a complicatedly patterned film can also be formed. Moreover, a rotational pattern can be obtained by rotating the target, and further a thin film having uniform thickness can be easily formed.