GAAS INTEGRATED CIRCUIT

PURPOSE:To obtain a GaAs integrated circuit utilizing the features of source, drain symmetrical and asymmetrical GaAs FETs in circuits by perpendicularly disposing the symmetrical and asymmetrical FETs on a board. CONSTITUTION:GaAs symmetrical and asymmetrical FETs 8, 9 are perpendicularly disposed...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OWADA KUNIKI, NAGAFUNE KAZUO, HIRAYAMA MASAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!