IMAGE FORMING MEMBER CONTAINING PLASMA SETTLED SILICON OXIDE

PURPOSE: To ensure high electric charge acceptance value and low dark attenuation characteristics by forming a light excitated charge transfer layer contg. islands of hydrogenated amorphous silicon or crystalline silicon in a silicon oxide matrix contg. at least 50atm% oxygen on a substrate. CONSTITUTION: The image forming member is formed by including a substrate 3 and a light excitated charge transfer layer 4 adjacent to the substrate 3 contg. regions 5 of amorphous hydrogenated or halogenated silicon contg. about 10-40atm% hydrogen or halogen as a light excitation substance in a matrix 7 of positive hole transfer molecules of silicon oxide contg. at least 50atm% oxygen. Since the layer 4 functions simultaneously as an electric charge transferring medium and a light excitation material, the objective silicon-base image forming member having desired high electric charge acceptance value and low electric charge loss characteristics in the dark is obtd.