STAGGERED TOP TYPE AMORPHOUS SILICON THIN FILM TRANSISTOR

PURPOSE:To eliminate crackings by a method wherein a silicon nitride layer is formed on an amorphous silicon layer and a silicon oxide layer is formed on the silicon nitride layer. CONSTITUTION:A silicon nitride layer 7 is formed on an amorphous silicon layer 6 as a gate insulating layer and a silic...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WATANABE YOSHIAKI, TANAKA SAKAE, SHIRAI KATSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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