ION BEAM SPUTTERING DEVICE

PURPOSE:To easily control the composition of a thin film composed of plural components and formed on a substrate by moving a target part in which plural kinds of targets are mosaically arranged and making the area ratio among respective targets in an ionic irradiation region variable. CONSTITUTION:I...

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Bibliographische Detailangaben
Hauptverfasser:	KODERA KOICHI, INOUE ISAMU
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To easily control the composition of a thin film composed of plural components and formed on a substrate by moving a target part in which plural kinds of targets are mosaically arranged and making the area ratio among respective targets in an ionic irradiation region variable. CONSTITUTION:In a vacuum chamber 1, a target part 3 in which plural kinds of targets are mosaically arranged is irradiated by an ion beam 6 formed by ionizing an inert gas by means of an ion gun 2, by which the targets are sputtered and a thin film of plural components is formed on a substrate 4 held by a rotary plate 10. In the above ion beam sputtering device, the above target part 3 is moved by means of a target part position control circuit 11 via a target part position control mechanism section 8, by which the area ratio among respective targets in the ion beam irradiation region in the target part 3 can be regulated. By this method, the above thin film can be formed into the desired composition.