JPH0125235B

PURPOSE:To obtain a thin-film Si solar cell, contact resistance between a metallic electrode and an amorphous Si layer therein is small, by previously forming the zone of the Si layer being in contact with the electrode by microcrystalline amorphous Si when the amorphous Si layer with a junction is formed on a light- transmitting insulating substrate through a transparent electrode and the metallic electrode is formed on the Si layer. CONSTITUTION:The light-transmitting insulating substrate 1 consisting of glass, etc. is coated with the transparent electrode 2 composed of an ITO film, an SnO2 film, etc., and the PIN junctions of the amorphous Si layers 3-5 consisting of a P type, an I type and an N type from the electrode 2 side are deposited on the electrode 2. The metallic electrode 6 is formed on the layer 5, but an N type microcrystalline amorphous Si layer 7 is interposed between the electrode 6 and the layer 5 without directly bringing the electrode 6 into contact with the layer 5. The layer 7 can be prepared easily by increasing high-frequency discharge power on the formation of glow discharge by a high-frequency input. Accordingly, the geometry factor of the layer 7 is enlarged with the increase of output power, and contact resistance is reduced.