MANUFACTURE OF COMPOUND SEMICONDUCTOR

PURPOSE:To enable a compound semiconductor in high quality containing Al such as superlattice layer, etc., to be deposited by a method wherein a mask in specified pattern is formed on an Si substrate and then a compound semicon ductor layer containing Al is deposited on an exposed region at the reduced pressure of 0.1-50Torr. CONSTITUTION:A mask in specified pattern is formed on an Si substrate and then a compound semiconductor layer containing Al is deposited on an exposed region at the reduced pressure of 0.1-50Torr. Thus, the compound semiconductor containing Al and subjected to less transition can be deposited on the Si sub strate. That is, when the mask is formed on the Si substrate to be selectively deposited by organic metal vapor epitaxial deposition(OMVPE) process, if said pressure reduction requirement is not met, polycrystal is separated on the mask so that the selective deposition of compound semiconductor layer in high quality may be hardly performed.