PATTERN FORMING METHOD FOR SEMICONDUCTOR DEVICE

PURPOSE:To make it possible to detect position aligning marks even if a film layer on the position aligning marks is thick, by removing the film layer in the region of the position aligning marks before the formation of a disk pattern beforehand, and exposing the position aligning mark. CONSTITUTION...

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Bibliographische Detailangaben
1. Verfasser:	YAO TAKEYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To make it possible to detect position aligning marks even if a film layer on the position aligning marks is thick, by removing the film layer in the region of the position aligning marks before the formation of a disk pattern beforehand, and exposing the position aligning mark. CONSTITUTION:A mask film 23 for lift-off is formed in the region of position aligning mark 13. Then, a film layer 24 is deposited on a first device pattern 12 and the mask film 23. The film layer 24 having the specified thickness is formed on the entire surface of a semiconductor substrate 11. When wet etching is performed and the mask film 23 is eluted, the film layer 24 on the mask film 23 is also removed. Therefore, the position aligning marks 13 are exposed on the semiconductor substrate 11. Thereafter, with the exposed position aligning marks 13 as position aligning references, a second disk pattern can be formed in the region of the first device pattern 12 highly accurately.