MANUFACTURE OF TRANSPARENT ALUMINUM NITRIDE FILM

PURPOSE:To easily manufacture a transparent AlN film having arbitrary transmissivity at high film-forming speed by implanting specific amounts of N ions in a thin Al film while vacuum-depositing the thin Al film onto a substrate and also holding the substrate at low temp. CONSTITUTION:In a vacuum chamber 1 held at the prescribed pressure by means of a vacuum pump, Al vapor 7 generated from an evaporation source 6 is vapor-deposited onto a substrate 3 attached to a holder 2 to form a thin Al film. Further, N ions from an ion source 4 are implanted in the above thin film under formation. The proper vapor deposition velocity of the above Al is 4-20Angstrom /S. Moreover, as the substrate 3, a glass sheet, a polyimide film, a silicon sheet, an Al sheet, a stainless steel sheet, etc., can be used. In the ion implantation method in the above vacuum vapor deposition method, N ions are simultaneously or intermittently applied in the ratio of approximately 1:1 to Al content. Simultaneously, the temp. of the substrate 3, at least in the thin film formation part, is held at