SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PURPOSE:To facilitate high speed operation and high density integration, by forming a polycrystalline silicon wiring layer on a semiconductor substrate, in the manner in which the thickness is large in a transistor region part, and making a polycide structure by arranging high melting point metallic silicide on the polycrystalline silicon. CONSTITUTION:Only the gate wiring of a transistor forming region is constituted by a thick polycrystalline silicon film 14, in order to stabilize element characteristics, and a polycide structure wherein high melting point metallic silicide 16 is formed on the polycrystalline silicon film 14 is made. Since the polycrystalline silicon film 14 of transistor region of the gate wiring is thick, the reaction between a gate oxide film 13 and elements to constitute silicide is restrained, thereby enabling the manufacture of a semiconductor device having stable element characteristics. Further, since a polycrystalline silicon film 16 to constitute the wiring except the transistor region is thin, the step-difference is reduced, and the later manufacturing process is facilitated.