HYDROPHILIZATION OF SILICON SLICE AND/OR SURFACE TREATMENT FOR REMOVING REMNANTS OF JOINTING AGENT
PURPOSE: To obtain the surface treatment method of silicon slice so as to make the surface hydrophilic and/or removing the residue of adhesive that is conducted by a small amount of chemicals in use at a low temperature by acting at least one kind of water solution that has a specific amount of a hy...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PURPOSE: To obtain the surface treatment method of silicon slice so as to make the surface hydrophilic and/or removing the residue of adhesive that is conducted by a small amount of chemicals in use at a low temperature by acting at least one kind of water solution that has a specific amount of a hydrogen peroxide and whose pH is adjusted within a specific range by an alkali metal compound or an alkaline earth metal compound onto a surface of a slice. CONSTITUTION: In the surface treatment method of silicon slice so as to make the surface hydrophilic and/or removing the residue of adhesive that begins with polishment using a solution containing at least 0.1wt.% of hydrogen peroxide and whose pH is adjusted within a range of 8-14 by means of an alkali metal compound or an alkaline earth metal compound, required materials with a very low concentration can be used, and only the hydrogen peroxide is slowly consumed in the process of the processing, then the chemical consumption is very low. Since a short processing time at room temperature is attained for this method and system heating, adaptive temperature control by a thermostat, and preheating of required solution are omitted, thermal stress onto a slice in contact with the solution is avoided at the same time. |
---|