ELECTRONIC COMPONENT

PURPOSE:To stabilize the characteristics of a circuit to be formed as well as to make possible a reduction in the size of an electronic component by a method wherein the component is provided with a single crystal, which is put on a substrate and is grown from a seed crystal having a thermal history and having a controlled orientation and exceeds the seed crystal to cover sufficiently a nonnucleation surface, and an active region formed in the single crystal. CONSTITUTION:An SiO3 film 3 is deposited on a substrate 1 by an atmospheric CVD method and an Si thin film is formed on this by an LPCVD method. P is doped to the obtained Si thin film by depositing a phosphosilicate glass consisting of a POCl3 on the Si thin film. Then, a 1mum square fine polycrystalline site is left by a photo lithograph and a reactive ion etching method and the other part is etched. Then, after being heat-treated in N2 gas, the site is put in a CVD device to perform an Si crystal forming treatment. As a result, a single crystal 5 is formed centering around a position where a polycrystalline film, which is a starting seed crystal, is arranged, covers the upper part of the film 3 on the periphery of the crystal 5 within a 100mum diameter range, there is deposition and growth of the crystal 5 on the film 3 located at a region where no crystal island exists and the crystal 5 has the orientation of .