MANUFACTURE OF HETERO JUNCTION BIPOLAR TRANSISTOR

PURPOSE:To obtain a silicon hetero junction bipolar transistor having excellent high speed operation characteristic by laminating fine crystalline silicon carbide by a plasma CVD method thereby to form an emitter layer. CONSTITUTION:An N type silicon epitaxial layer 2 is formed on an N type silicon wafer 1. Then, an SiO2 film 4 is formed by thermally oxidizing, and patterned. Thereafter, after B2O3 is adhered to the surface, boron is diffused in a wet O2 atmosphere, thereby forming a P-type region 3. Again, the film 4 is patterned. Thereafter, 5000Angstrom of Nmuc-SiC:H5 having 1OMEGA.cm is laminated under the conditions (a) 0