INPUT PROTECTION DEVICE
PURPOSE:To prevent direct application of a high voltage due to input noise to a gate electrode by connecting the gate electrode of a field field-effect transistor to resistance elements. CONSTITUTION:An input protection device comprises an external signal input pad 1, an internal circuit 700, a resi...
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| creator | KOSHIMARU SHIGERU |
| description | PURPOSE:To prevent direct application of a high voltage due to input noise to a gate electrode by connecting the gate electrode of a field field-effect transistor to resistance elements. CONSTITUTION:An input protection device comprises an external signal input pad 1, an internal circuit 700, a resistance elements 2, 3, a field field-effect transistor wherein a field oxide film is used as a gate oxide film, and a field effect transistor 5. In such a device, when noise is applied, any noise due to a delay based on a time constant of the resistance element 2 is applied to the gate electrode of the field field-effect transistor, whereby its peak value can be suppressed and, as a result, a current flowing through the field field-effect transistor can be suppressed substantially. |
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CONSTITUTION:An input protection device comprises an external signal input pad 1, an internal circuit 700, a resistance elements 2, 3, a field field-effect transistor wherein a field oxide film is used as a gate oxide film, and a field effect transistor 5. In such a device, when noise is applied, any noise due to a delay based on a time constant of the resistance element 2 is applied to the gate electrode of the field field-effect transistor, whereby its peak value can be suppressed and, as a result, a current flowing through the field field-effect transistor can be suppressed substantially.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1989</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890601&DB=EPODOC&CC=JP&NR=H01140770A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890601&DB=EPODOC&CC=JP&NR=H01140770A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOSHIMARU SHIGERU</creatorcontrib><title>INPUT PROTECTION DEVICE</title><description>PURPOSE:To prevent direct application of a high voltage due to input noise to a gate electrode by connecting the gate electrode of a field field-effect transistor to resistance elements. CONSTITUTION:An input protection device comprises an external signal input pad 1, an internal circuit 700, a resistance elements 2, 3, a field field-effect transistor wherein a field oxide film is used as a gate oxide film, and a field effect transistor 5. In such a device, when noise is applied, any noise due to a delay based on a time constant of the resistance element 2 is applied to the gate electrode of the field field-effect transistor, whereby its peak value can be suppressed and, as a result, a current flowing through the field field-effect transistor can be suppressed substantially.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1989</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBD39AsIDVEICPIPcXUO8fT3U3BxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GhoYmBubmBo7GxKgBAOT7H68</recordid><startdate>19890601</startdate><enddate>19890601</enddate><creator>KOSHIMARU SHIGERU</creator><scope>EVB</scope></search><sort><creationdate>19890601</creationdate><title>INPUT PROTECTION DEVICE</title><author>KOSHIMARU SHIGERU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH01140770A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1989</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KOSHIMARU SHIGERU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOSHIMARU SHIGERU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INPUT PROTECTION DEVICE</title><date>1989-06-01</date><risdate>1989</risdate><abstract>PURPOSE:To prevent direct application of a high voltage due to input noise to a gate electrode by connecting the gate electrode of a field field-effect transistor to resistance elements. CONSTITUTION:An input protection device comprises an external signal input pad 1, an internal circuit 700, a resistance elements 2, 3, a field field-effect transistor wherein a field oxide film is used as a gate oxide film, and a field effect transistor 5. In such a device, when noise is applied, any noise due to a delay based on a time constant of the resistance element 2 is applied to the gate electrode of the field field-effect transistor, whereby its peak value can be suppressed and, as a result, a current flowing through the field field-effect transistor can be suppressed substantially.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | INPUT PROTECTION DEVICE |
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