INPUT PROTECTION DEVICE

PURPOSE:To prevent direct application of a high voltage due to input noise to a gate electrode by connecting the gate electrode of a field field-effect transistor to resistance elements. CONSTITUTION:An input protection device comprises an external signal input pad 1, an internal circuit 700, a resi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: KOSHIMARU SHIGERU
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To prevent direct application of a high voltage due to input noise to a gate electrode by connecting the gate electrode of a field field-effect transistor to resistance elements. CONSTITUTION:An input protection device comprises an external signal input pad 1, an internal circuit 700, a resistance elements 2, 3, a field field-effect transistor wherein a field oxide film is used as a gate oxide film, and a field effect transistor 5. In such a device, when noise is applied, any noise due to a delay based on a time constant of the resistance element 2 is applied to the gate electrode of the field field-effect transistor, whereby its peak value can be suppressed and, as a result, a current flowing through the field field-effect transistor can be suppressed substantially.