SEMICONDUCTOR STORAGE DEVICE
PURPOSE:To simplify production processes by providing a driving gate which drives a pair of transmission gates connected to a pair of data lines in a memory block and transmitting a Y address select signal to this driving gate through data lines of the memory block. CONSTITUTION:When a storage eleme...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PURPOSE:To simplify production processes by providing a driving gate which drives a pair of transmission gates connected to a pair of data lines in a memory block and transmitting a Y address select signal to this driving gate through data lines of the memory block. CONSTITUTION:When a storage element 11a in a memory block M1 arranged nearest to a Y address decoder 1 is selected, a control signal phi11 of a control signal line 12a is set to a high level to make a driving gate 7a conductive and the Y address select signal is supplied to transmission gates 4a and 4b. Consequently, transmission gates 4a and 4b are made conductive, and a data line 8a and an IO line 3a are connected, and a data line 8b and an IO line 3b are connected, and data is outputted from the storage element 11a to the IO line 3a through the data line 8a. Since data lines 8a-8d are used to transmit the Y address select signal in this manner, a high-integrated semiconductor storage device where many memory blocks M1...Mn... can be controlled by one Y address decoder is realized. |
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